Display panel, manufacturing method thereof, display device

ABSTRACT

A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.

RELATED APPLICATION

The present application claims the benefit of Chinese Patent ApplicationNo. 201910059282.5, filed on Jan. 22, 2019, the entire disclosure ofwhich is incorporated herein by reference.

FIELD

The present disclosure relates to the field of display technologies, andspecifically to a display panel, a manufacturing method thereof, and adisplay device.

BACKGROUND

Organic light emitting diode displays are characterized byself-illumination, wide viewing angle, low power consumption, highcontrast, and the like, and are therefore one of the mainstream displaytypes. Compared to liquid crystal displays, which cannot achieveflexible bending due to their structural limitations, organic lightemitting diode displays can realize flexible display by fabricatingrespective layers with flexible materials, thereby expanding the displayapplication field and improving the user experience.

A typical organic light emitting diode display comprises an arraysubstrate and an organic light emitting element on the array substrate,wherein the array substrate comprises an array of transistors thatprovides a driving signal to the organic light emitting element. Inorder to prevent light emitted by the organic light emitting elementfrom being incident on the active layer of the transistor and therebyaffecting normal operation of the transistor, the gate of the transistormay be arranged on the top of the transistor (i.e., forming a top gatetype transistor), so that the gate can simultaneously act as a lightshielding layer to protect the underlying active layer.

However, when a flexible organic light emitting diode display is beingfabricated, it is necessary to lift off a fabricated flexible devicefrom a rigid substrate using a laser. The laser will be adverselyincident on the active layer of the transistor from below, therebyaffecting the performance of the transistor. It has been proposed toarrange a metal light shielding layer under the active layer of thetransistor to shield ultraviolet light used in a laser lift-off process.However, the metal light shielding layer will still cause a part of thelight to be obliquely incident into the active layer after beingreflected multiple times, so that damage to the active layer cannot becompletely avoided.

SUMMARY

An aspect of the present disclosure provides a display panel comprising:a substrate on a base; a transistor stack on the substrate; and afluorescent layer between the base and the transistor stack. Thefluorescent layer is configured to prevent light from damaging an activelayer in the transistor stack in a laser lift-off process, and anorthographic projection of the fluorescent layer on the base covers anorthographic projection of the active layer on the base.

According to some exemplary embodiments of the present disclosure, thebase is a rigid base and the substrate is a flexible substrate.

According to some exemplary embodiments of the present disclosure, theorthographic projection of the fluorescent layer on the base completelyoverlaps the orthographic projection of the active layer on the base.

According to some exemplary embodiments of the present disclosure, theorthographic projection of the fluorescent layer on the base completelyoverlaps an orthographic projection of the substrate on the base.

According to some exemplary embodiments of the present disclosure, thefluorescent layer comprises a photoresist mixed with at least one of anorganic fluorescent material and an inorganic fluorescent material.

According to some exemplary embodiments of the present disclosure, theorganic fluorescent material comprises at least one of fluorescein,rhodamine, a cyanine dye and a pyrene dye, and the inorganic fluorescentmaterial comprises at least one of an alkali metal sulfide and analuminate.

According to some exemplary embodiments of the present disclosure, thetransistor stack comprises the active layer, a gate insulating layer onthe active layer, a gate on the gate insulating layer, an interlayerinsulating layer on the gate, and a source and a drain on the interlayerinsulating layer and in contact with the active layer through a via holein the interlayer insulating layer.

According to some exemplary embodiments of the present disclosure, theabove display panel further comprises a passivation layer on thetransistor stack, a planarization layer on the passivation layer, anelectrode layer on the planarization layer and in contact with thetransistor stack through via holes in the passivation layer and theplanarization layer, a pixel defining layer on the electrode layer, alight emitting layer on the pixel defining layer, and a thin filmencapsulation layer on the light emitting layer.

According to some exemplary embodiments of the present disclosure, theabove display panel further comprises a support layer between the pixeldefining layer and the light emitting layer.

According to some exemplary embodiments of the present disclosure, theabove display panel further comprises a buffer layer between thefluorescent layer and the active layer.

Another aspect of the present disclosure provides a display devicecomprising any of the display panels described above.

According to some exemplary embodiments of the present disclosure, thebase is removed from the substrate.

A further aspect of the present disclosure provides a manufacturingmethod of a display panel, comprising: providing a substrate on a base;providing a fluorescent layer on the substrate, the fluorescent layerbeing configured to prevent light from damaging an active layer in atransistor stack in a laser lift-off process; providing the transistorstack on the fluorescent layer, wherein an orthographic projection ofthe fluorescent layer on the base covers an orthographic projection ofthe active layer on the base; and lifting off the base from thesubstrate by the laser lift-off process.

According to some exemplary embodiments of the present disclosure, saidproviding a fluorescent layer on the substrate comprises: coating afluorescent material layer on the substrate; and patterning thefluorescent material layer to form the fluorescent layer such that theorthographic projection of the fluorescent layer on the base completelyoverlaps the orthographic projection of the active layer on the base.

According to some exemplary embodiments of the present disclosure, saidcoating a fluorescent material layer on the substrate comprises: mixingone or more of an organic fluorescent material and an inorganicfluorescent material in a photoresist to form a fluorescent material;and coating the fluorescent material on the substrate to form thefluorescent material layer.

According to some exemplary embodiments of the present disclosure, theabove manufacturing method further comprises providing a buffer layer onthe fluorescent layer prior to providing the transistor stack.

According to some exemplary embodiments of the present disclosure, saidproviding a transistor stack on the fluorescent layer comprises: formingthe active layer, a gate insulating layer, a gate, an interlayerinsulating layer, and a source and a drain on the fluorescent layersuccessively. The source and the drain are in contact with the activelayer through a via hole in the interlayer insulating layer.

According to some exemplary embodiments of the present disclosure, theabove manufacturing method further comprises: forming a passivationlayer, a planarization layer, an electrode layer, a pixel defininglayer, a light emitting layer, and an encapsulation layer on thetransistor stack successively. The electrode layer is in contact withthe source and the drain through a via hole in the passivation layer andthe planarization layer.

According to some exemplary embodiments of the present disclosure, theabove manufacturing method further comprises: forming a support layerbetween the pixel defining layer and the light emitting layer.

According to some exemplary embodiments of the present disclosure, thebase is made of a rigid material, and the substrate is made of aflexible material.

The above description is only an overview of the technical solutions ofembodiments of the present disclosure. In order to enable the technicalmeasures of the embodiments of the present disclosure to be clearlyunderstood and implemented according to the contents of thespecification, and to make the above and other purposes, features andadvantages of the embodiments of the present disclosure clear andreadily understood, implementations of the embodiments of the presentdisclosure are illustrated below.

BRIEF DESCRIPTION OF THE DRAWINGS

Various other advantages and benefits will become apparent to thoseordinarily skilled in the art through reading the following detaileddescription of exemplary embodiments. The drawings are only for thepurpose of illustrating the exemplary embodiments, and are not to beconstrued as limiting embodiments of the present disclosure. In thedrawings, the same reference numerals are used to denote the samecomponents. In the drawings,

FIG. 1 is a schematic structural view of a display panel according to anembodiment of the present disclosure;

FIG. 2 is a flow chart of a method of manufacturing a display panelaccording to an embodiment of the present disclosure;

FIG. 3 is a schematic structural view illustrating fabrication of asubstrate on a base according to an embodiment of the presentdisclosure;

FIG. 4 is a schematic structural view illustrating fabrication of afluorescent layer on the substrate of FIG. 3 according to an embodimentof the present disclosure;

FIG. 5 is a schematic structural view illustrating fabricating a bufferlayer on the substrate of FIG. 4 according to an embodiment of thepresent disclosure;

FIG. 6 is a schematic structural view illustrating fabrication of anactive layer, a gate insulating layer, and a gate on the substrate ofFIG. 5 according to an embodiment of the present disclosure;

FIG. 7 is a schematic structural view illustrating fabrication of aninterlayer insulating layer on the substrate of FIG. 6 according to anembodiment of the present disclosure;

FIG. 8 is a schematic structural view illustrating fabrication of asource and a drain on the substrate of FIG. 7 according to an embodimentof the present disclosure;

FIG. 9 is a schematic structural view illustrating fabrication of apassivation layer and a planarization layer on the substrate of FIG. 8according to an embodiment of the present disclosure;

FIG. 10 is a schematic structural view illustrating fabrication of anelectrode layer on the substrate of FIG. 9 according to an embodiment ofthe present disclosure; and

FIG. 11 is a schematic structural view illustrating fabrication of apixel defining layer and a support layer on the substrate of FIG. 10according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

Exemplary embodiments of the present disclosure will be described inmore detail below with reference to the accompanying drawings. While theexemplary embodiments of the present disclosure have been illustrated inthe drawings, it is to be understood that the present disclosure can beimplemented in various forms and should not be limited by theembodiments illustrated herein. On the contrary, these embodiments areprovided to enable the present disclosure to be understood thoroughly,and to completely convey the scope of the present disclosure to thoseskilled in the art.

FIG. 1 shows a schematic structural view of a display panel according toan embodiment of the present disclosure. As shown in FIG. 1, anembodiment of the present disclosure provides a display panel comprisinga substrate 2 on a base 1, a transistor stack on the substrate 2, and afluorescent layer 7 between the base 1 and the transistor stack. Thefluorescent layer 7 is configured to prevent light from damaging anactive layer 4 in the transistor stack in a laser lift-off process, andan orthographic projection of the fluorescent layer 7 on the base 1covers an orthographic projection of the active layer 4 on the base 1.

In an embodiment of the present disclosure, a fluorescent layer is usedin place of the conventionally used metal light shielding layer. Thefluorescent layer can typically absorb high-energy light generated inthe laser lift-off process and convert it into low-energy light that hasno effect on the active layer 4, thereby ensuring that the active layer4 is not adversely affected when the substrate 2 is lifted off from thebase 1 using a laser.

In an embodiment of the present disclosure, the base 1 may be a rigidbase, for example, a glass base, etc., which is nearly inflexible andserves to provide support for the superstructure during fabrication ofthe superstructure. The superstructure including the substrate 2 and itsupper structures may have flexibility as a whole, that is, it may bebent to some extent without affecting the normal display function. Inthis case, a flexible organic light emitting diode display panel can bemade.

Optionally, in an embodiment, the orthographic projection of thefluorescent layer 7 on the base 1 completely overlaps the orthographicprojection of the active layer 4 on the base 1 in order to provideprotection for the active layer 4 on the one hand, and avoid unnecessarywaste of the fluorescent layer 7 on the other hand. Moreover, since thefluorescent layer 7 is generally less flexible than a flexible organicfunctional material for making the flexible display panel, thearrangement of the fluorescent layer 7 having a smaller area can improvethe bending performance of the flexible display panel.

Alternatively, in another embodiment, the orthographic projection of thefluorescent layer 7 on the base 1 completely overlaps an orthographicprojection of the substrate 2 on the base 1 in order to provide moresufficient protection for the active layer 4.

In an exemplary embodiment, the fluorescent layer 7 comprises aphotoresist mixed with an organic fluorescent material, or a photoresistmixed with an inorganic fluorescent material. However, other suitablematerials may also be employed by those skilled in the art in light ofthe teachings of the present disclosure.

By way of example, the organic fluorescent material comprises at leastone of fluorescein, rhodamine, a cyanine dye and a pyrene dye. Theinorganic fluorescent material comprises at least one of an alkali metalsulfide and an aluminate.

In an exemplary embodiment, as shown in FIG. 1, the transistor stackfurther comprises a gate insulating layer 5 on the active layer 4, agate 6 on the gate insulating layer 5, an interlayer insulating layer 8on the gate 6, and a source and a drain 9 on the interlayer insulatinglayer 8 and in contact with the active layer 4 through a via hole in theinterlayer insulating layer 8.

Further, in an exemplary embodiment, the display panel further comprisesa passivation layer 10 on the transistor stack, a planarization layer 11on the passivation layer 10, an electrode layer 12 on the planarizationlayer 11 and in contact with the source and the drain 9 through viaholes in the passivation layer 10 and the planarization layer 11, apixel defining layer 13 on the electrode layer 12, a light emittinglayer 15 on the pixel defining layer 13, and a thin film encapsulationlayer 16 on the light emitting layer 15. Alternatively, the displaypanel may further comprise a support layer 14 between the pixel defininglayer 13 and the light emitting layer 15.

In an exemplary embodiment, as shown in FIG. 1, the display panelfurther comprises a buffer layer 3 between the fluorescent layer 7 andthe active layer 4. The buffer layer 3 can prevent various particles inthe fluorescent layer 7 from entering the active layer 4 and therebyaffecting the performance of the active layer 4, ensuring normaloperation of the transistor.

Instead of using a metal light shielding layer to shield high-energyultraviolet light generated in the laser lift-off process, inembodiments of the present disclosure, the fluorescent layer is utilizedto absorb high-energy ultraviolet light and convert it into lower-energylight. The low-energy light almost has no effect on the active layer ofthe transistor. Therefore, compared to the scheme in which the metallight shielding layer may cause ultraviolet light to be obliquelyincident into the active layer so that a desired light shielding effectcannot be achieved, embodiments provided by the present disclosure canachieve a more desirable effect of shielding harmful light.

On the other hand, the metal light shielding layer may form a parasiticcapacitance with other metal layers in the display panel, therebyaffecting the performance of the display panel. In contrast, inembodiments of the present disclosure, the fluorescent layer and themetal layers in the display panel do not form a parasitic capacitance,and thus the influence of the parasitic capacitance on thecharacteristics of the display panel can be eliminated. In addition, inthe case of a flexible display panel, the fluorescent layer can achievea better flexible bending effect than the metal light shielding layer,and thus is more advantageous for the realization of a flexible organiclight emitting diode display panel.

An embodiment of the present disclosure provides a display devicecomprising any of the display panels described above. In such a displaydevice, instead of using a metal light shielding layer to shieldhigh-energy ultraviolet light generated in the laser lift-off process, afluorescent layer is utilized to absorb high-energy ultraviolet lightand convert it into lower-energy light. The low-energy light almost hasno effect on the active layer of the transistor. Therefore, compared tothe scheme in which the metal light shielding layer may causeultraviolet light to be obliquely incident into the active layer so thata desired light shielding effect cannot be achieved, embodimentsprovided by the present disclosure can achieve a more desirable lightshielding effect.

An embodiment of the present disclosure further provides a manufacturingmethod of a display panel. As shown in FIG. 2, the manufacturing methodof the display panel comprises: at step S101, providing a substrate on abase; at step S102, providing a fluorescent layer on the substrate; atstep S103, providing a transistor stack on the fluorescent layer,wherein an orthographic projection of the fluorescent layer on the basecovers an orthographic projection of the active layer in the transistorstack on the base; and at step S104, lifting off the base from thesubstrate by a laser lift-off process.

The steps of the manufacturing method of the display panel according toan embodiment of the present disclosure will be described in detailbelow with reference to FIG. 1 and FIG. 3 to FIG. 11.

At step S101, as shown in FIG. 3, a substrate 2 is provided on a base 1.Specifically, the base 1 may be a rigid base such as a glass base, andthe substrate 2 may be a flexible substrate such as a polyimide film. Inthis case, the flexible substrate 2 can be provided on the rigid base 1by coating.

At step S102, as shown in FIG. 4, a fluorescent layer 7 is provided onthe substrate 2. Specifically, a fluorescent material may be coated onthe substrate 2, and then the fluorescent material may be patterned toform the fluorescent layer 7. The orthographic projection of thepatterned fluorescent layer 7 on the base 1 may completely overlap theorthographic projection of the active layer formed later on the base 1in order to provide protection for the active layer on the one hand andto avoid unnecessary waste of the fluorescent layer 7 on the other hand.Moreover, since the fluorescent layer 7 is generally less flexible thana flexible organic functional material for making the flexible displaypanel, the arrangement of the fluorescent layer 7 having a smaller areacan improve the bending performance of the flexible display panel.

Alternatively, the fluorescent material may not be patterned, in whichcase the formed fluorescent layer 7 covers the entire substrate 2 toprovide more sufficient protection for the active layer formed later.

In an exemplary embodiment, coating the fluorescent material on thesubstrate comprises mixing at least one of an organic fluorescentmaterial and an inorganic fluorescent material in a photoresist at acertain ratio to form the fluorescent material, and coating thefluorescent material on the substrate.

Optionally, as shown in FIG. 5, the above method further comprisesproviding a buffer layer 3 on the fluorescent layer 7 prior to providingthe transistor stack. The buffer layer 3 may be a single layer mediumsuch as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride(SiON) or the like, or a composite film layer. The buffer layer 3 canprevent various particles in the fluorescent layer 7 from entering theactive layer formed later, ensuring the characteristics of the displaypanel.

Then, at step S103, a transistor stack is provided on the fluorescentlayer 7. In an exemplary embodiment, the transistor stack includes anactive layer 4, a gate insulating layer 5 on the active layer 4, a gate6 on the gate insulating layer 5, an interlayer insulating layer 8 onthe gate 6, and a source and a drain 9 on the interlayer insulatinglayer 8 and in contact with the active layer 4 through a via hole in theinterlayer insulating layer 8. Accordingly, step S103 may includesub-steps as shown in FIGS. 6-8.

As shown in FIG. 6, the active layer 4 is formed on the buffer layer 3by a patterning process. The patterning process includes a part or allof the processes of coating, exposing, developing, etching, and removingthe photoresist. The active layer formed in embodiments of the presentdisclosure may be an oxide semiconductor active layer including, but notlimited to, a semiconductor material such as indium gallium zinc oxide(IGZO), indium zinc oxide (IZO), etc.

Next, as shown in FIG. 6, the gate insulating layer 5 and the gate 6 aresequentially formed on the active layer 4 by a patterning process. In anexemplary embodiment, the gate insulating layer 5 and the gate 6 may beformed by performing a photolithography process once. Specifically,after depositing a gate insulating material layer and a gate materiallayer sequentially, a photolithography process is performed on the gateinsulating material layer and the gate material layer, then the gate 6is formed by wet etching, and the gate insulating layer 5 is formed bydry etching. The gate insulating layer 5 may include one or more ofsilicon nitride and silicon oxide, and may be a single layer or amultilayer structure. Thereafter, exposed portions of the active layer 4need to be specially treated so that portions thereof connected to thesource and the drain 9 formed later become conductive to reduce thecontact resistance.

Next, as shown in FIG. 7, the interlayer insulating layer 8 is formed onthe gate 6 by a patterning process. The interlayer insulating layer 8may include one or more of silicon nitride and silicon oxide, and may bea single layer or a multilayer structure. The interlayer insulatinglayer 8 has a via hole exposing a conductive portion of the active layer4 so that the source and the drain 9 formed later are connected to theactive layer 4 through the via hole.

Next, as shown in FIG. 8, the source and the drain 9 are formed on theinterlayer insulating layer 8 by a patterning process. The source andthe drain layer 9 may be made of a low-resistance metal, for example,made of copper (Cu).

In an exemplary embodiment, the display panel further comprises, asshown in FIG. 1, a passivation layer 10 on the transistor stack, aplanarization layer 11 on the passivation layer 10, an electrode layer12 on the planarization layer 11 and in contact with the source and thedrain 9 through via holes in the passivation layer 10 and theplanarization layer 11, a pixel defining layer 13 on the electrode layer12, a support layer 14 on the pixel defining layer 13, a light emittinglayer 15 on the support layer 14, and a thin film encapsulation layer 16on the light emitting layer 15. Accordingly, the above method may alsocomprise additional steps as shown in FIGS. 9-11.

Specifically, as shown in FIG. 9, the passivation layer 10 and theplanarization layer 11 are sequentially formed on the transistor stackby a patterning process. The passivation layer 10 may be made of siliconoxide and/or silicon nitride, and the planarization layer may be made ofan organic material such as a resin.

Next, as shown in FIG. 10, the electrode layer 12 is formed on theplanarization layer 11 by a patterning process. By way of example, theanode layer 12 may include indium tin oxide (ITO) or silver (Ag).

Next, as shown in FIG. 11, the pixel defining layer 13 and the supportlayer 14 are formed on the anode layer 12. Specifically, a pixeldefining material layer is patterned using a patterning process andbaked to form the pixel defining layer 13. A support material layer ispatterned using a patterning process and baked to form the support layer14. The support layer 14 is used to prevent an evaporation mask fromdirectly contacting the underlying structure during the subsequentevaporation process, thereby providing protection for the underlyingstructure.

Next, as shown in FIG. 11, the light emitting layer 15 and the thin filmencapsulation layer 16 are formed on the support layer 14.

In an embodiment of the present disclosure, instead of using a metallight shielding layer to shield high energy ultraviolet light generatedin a laser lift-off process, a fluorescent layer is utilized to absorbhigh-energy ultraviolet light and convert it into lower-energy light.The low-energy light almost has no effect on the active layer of thetransistor. Therefore, compared to the scheme in which the metal lightshielding layer may cause ultraviolet light to be obliquely incidentinto the active layer so that a desired light shielding effect cannot beachieved, embodiments provided by the present disclosure can achieve amore desirable effect of shielding harmful light.

On the other hand, the metal light shielding layer may form a parasiticcapacitance with other metal layers in the display panel, therebyaffecting the performance of the display panel. In contrast, inembodiments of the present disclosure, the fluorescent layer and themetal layers in the display panel do not form a parasitic capacitance,and thus the influence of the parasitic capacitance on thecharacteristics of the display panel can be eliminated. In addition, inthe case of a flexible display panel, the fluorescent layer can achievea better flexible bending effect than the metal light shielding layer,and thus is more advantageous for the realization of the flexibledisplay panel.

What have been described above are only part of the embodiments of thepresent disclosure. It is to be noted that those ordinarily skilled inthe art can also make several improvements and modifications withoutdeparting from the principle of the present disclosure. Theseimprovements and modifications should also be regarded as falling withinthe scope of the present disclosure.

1. A display panel comprising: a substrate on a base; a transistor stackon the substrate; and a fluorescent layer between the base and thetransistor stack, wherein the fluorescent layer is configured to preventlight from damaging an active layer in the transistor stack in a laserlift-off process, and wherein an orthographic projection of thefluorescent layer on the base overlaps an orthographic projection of theactive layer on the base.
 2. The display panel according to claim 1,wherein the base comprises a rigid base and the substrate comprises aflexible substrate.
 3. The display panel according to claim 1, whereinthe orthographic projection of the fluorescent layer on the basecompletely overlaps the orthographic projection of the active layer onthe base.
 4. The display panel according to claim 1, wherein theorthographic projection of the fluorescent layer on the base completelyoverlaps an orthographic projection of the substrate on the base.
 5. Thedisplay panel according to claim 1, wherein the fluorescent layercomprises a photoresist mixed with at least one of an organicfluorescent material and an inorganic fluorescent material.
 6. Thedisplay panel according to claim 5, wherein the organic fluorescentmaterial comprises at least one of fluorescein, rhodamine, a cyanine dyeor a pyrene dye, and wherein the inorganic fluorescent materialcomprises at least one of an alkali metal sulfide or an aluminate. 7.The display panel according to claim 1, wherein the transistor stackcomprises the active layer, a gate insulating layer on the active layer,a gate on the gate insulating layer, an interlayer insulating layer onthe gate, and a source and a drain on the interlayer insulating layerand in contact with the active layer through a via hole in theinterlayer insulating layer.
 8. The display panel according to claim 1,further comprising: a passivation layer on the transistor stack, aplanarization layer on the passivation layer, an electrode layer on theplanarization layer and in contact with the transistor stack through avia hole in the passivation layer and the planarization layer, a pixeldefining layer on the electrode layer, a light emitting layer on thepixel defining layer, and a thin film encapsulation layer on the lightemitting layer.
 9. The display panel according to claim 8, furthercomprising a support layer between the pixel defining layer and thelight emitting layer.
 10. The display panel according to claim 1,further comprising a buffer layer between the fluorescent layer and theactive layer.
 11. A display device comprising the display panelaccording to claim
 1. 12. The display device according to claim 11,wherein the base is removed from the substrate.
 13. A manufacturingmethod of a display panel, comprising: providing a substrate on a base;providing a fluorescent layer on the substrate, the fluorescent layerbeing configured to prevent light from damaging an active layer in atransistor stack in a laser lift-off process; providing the transistorstack on the fluorescent layer, wherein an orthographic projection ofthe fluorescent layer on the base overlaps an orthographic projection ofthe active layer on the base; and lifting off the base from thesubstrate by the laser lift-off process.
 14. The manufacturing methodaccording to claim 13, wherein said providing the fluorescent layer onthe substrate comprises: coating a fluorescent material layer on thesubstrate; and patterning the fluorescent material layer to form thefluorescent layer such that the orthographic projection of thefluorescent layer on the base completely overlaps the orthographicprojection of the active layer on the base.
 15. The manufacturing methodaccording to claim 14, wherein said coating the fluorescent materiallayer on the substrate comprises: mixing at least one of an organicfluorescent material or an inorganic fluorescent material in aphotoresist to form a fluorescent material; and coating the fluorescentmaterial on the substrate to form the fluorescent material layer. 16.The manufacturing method according to claim 13, further comprising:providing a buffer layer on the fluorescent layer prior to providing thetransistor stack.
 17. The manufacturing method according to claim 13,wherein said providing the transistor stack on the fluorescent layercomprises: forming the active layer, a gate insulating layer, a gate, aninterlayer insulating layer, and a source and a drain on the fluorescentlayer successively, wherein the source and the drain are in contact withthe active layer through a via hole in the interlayer insulating layer.18. The manufacturing method according to claim 13, further comprising:forming a passivation layer, a planarization layer, an electrode layer,a pixel defining layer, a light emitting layer, and an encapsulationlayer on the transistor stack successively, wherein the electrode layeris in contact with the source and the drain through a via hole in thepassivation layer and the planarization layer.
 19. The manufacturingmethod according to claim 18, further comprising: forming a supportlayer between the pixel defining layer and the light emitting layer. 20.The manufacturing method according to claim 13, wherein the basecomprises a rigid material, and the substrate comprises a flexiblematerial.